PHX18NQ11 Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS™ standard level FET
03am63
12
12
10 V 6 V
Tj = 25 °C
ID
ID
(A)
(A)
8
5.4 V
8
03am65
5.2 V
4
5V
4.8 V
4.6 V
4.4 V
0
0
0.5
1
1.5
2
VDS (V)
4
150 °C
Tj = 25 °C
0
0
2
4
6
VGS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 150 °C; V_DS > I_D × R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03am64
0.2
3
RDSon ^{VGS = 4.8 V 5 V 5.2 V 5.4 V}
Tj = 25 °C
(Ω)
a
0.15
2
0.1
6V
10 V
1
0.05
03aa29
0
0
4
8
ID (A) ¹²
0
-60
0
60
120 _{Tj (°C)} 180
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 12915
Product data
Rev. 01 — 13 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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