PHX18NQ11 Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS™ standard level FET
5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
R_th(j-h) thermal resistance from junction to heatsink
[1] External heatsink connected to mounting base.
Conditions
Figure 4
5.1 Transient thermal impedance
Min Typ Max Unit
[1] _{- - 4 K/W}
03am61
10
Zth(j-h)
(K/W)
δ = 0.5
1 0.2
0.1
0.05
0.02
single pulse
10-1
10-4
10-3
10-2
10-1
P
δ
=
tp
T
tp
t
T
1
10
tp (s)
Fig 4. Transient thermal impedance from junction to heatsink as a function of pulse duration.
9397 750 12915
Product data
Rev. 01 — 13 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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