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PHX18NQ11 Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS™ standard level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
110 -
-
V
99 -
-
V
VGS(th) gate-source threshold voltage
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
23
1.2 -
-
-
4V
-
V
4.4 V
IDSS
drain-source leakage current
IGSS
gate-source leakage current
VDS = 100 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±10 V; VDS = 0 V
-
-
1 µA
-
-
500 µA
-
10 100 nA
RDSon drain-source on-state resistance
VGS = 10 V; ID = 9 A; Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
-
67 90 mΩ
-
148 198 mΩ
Dynamic characteristics
Qg(tot) total gate charge
ID = 3 A; VDD = 80 V; VGS = 10 V; Figure 13
-
21 -
nC
Qgs
gate-source charge
-
2.5 -
nC
Qgd
gate-drain (Miller) charge
-
8-
nC
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11
-
635 -
pF
Coss
output capacitance
-
105 -
pF
Crss
td(on)
tr
reverse transfer capacitance
turn-on delay time
rise time
-
60 -
pF
VDD = 50 V; RL = 15 Ω; VGS = 10 V; RG = 5.6 Ω -
6-
ns
-
12 -
ns
td(off)
turn-off delay time
-
20 -
ns
tf
fall time
-
10 -
ns
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 12 A; VGS = 0 V; Figure 12
trr
reverse recovery time
IS = 12 A; dIS/dt = −100 A/µs; VGS = 0 V
-
0.87 1.2 V
-
55 -
ns
Qr
recovered charge
-
135 -
nC
9397 750 12915
Product data
Rev. 01 — 13 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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