PHX18NQ11 Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

PHX18NQ11T
N-channel TrenchMOS™ standard level FET
M3D308
Rev. 01 — 13 February 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a fully isolated plastic
package using TrenchMOS™ technology.
1.2 Features
s Low on-state resistance
s Isolated mounting base
s Fast switching
s Low thermal resistance
1.3 Applications
s DC-to-DC converters
s Switched-mode power supplies
1.4 Quick reference data
s V_DS ≤ 110 V
s P_tot ≤ 31.2 W
s I_D ≤ 12.5 A
s R_DSon ≤ 90 mΩ
2. Pinning information
Table 1: Pinning - SOT186A (TO-220F), simplified outline and symbol
Pin
Description
Simplified outline
1
gate (g)
2
source (s)
mb
3
drain (d)
mb
mounting base;
isolated
Symbol
d
g
MBB076
s
1 2 3 _MBK110
SOT186A (TO-220F)