PHX18NQ11 Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS™ standard level FET
5
VGS(th)
(V)
4
3
max
typ
03aa32
10-1
ID
(A)
10-2
10-3
03aa35
min typ
max
2
min
10-4
1
10-5
0
-60
0
60
120 _{Tj (°C)} 180
10-6
0
2
4
6
VGS (V)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
T_j = 25 °C
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
104
C
(pF)
103
03am67
Ciss
102
Coss
10
10-1
1
Crss
10 _{VDS (V)} 102
V_GS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 12915
Product data
Rev. 01 — 13 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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