PHX18NQ11 Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS™ standard level FET
120
Pder
(%)
80
03aa13
120
Ider
(%)
80
03aa21
40
40
0
0
50
100 _{Th (°C)} 150
P_der = _P-------^P----^t--^o---^t------- × 100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of heatsink temperature.
102
ID
(A)
10
Limit RDSon = VDS / ID
0
0
50
100
150
200
Th (°C)
I_der = -_I-------^I--^D--------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of heatsink temperature.
03am62
tp = 10 µ s
100 µ s
DC
1 ms
1
10 ms
100 ms
10-1
1
10
102
103
VDS (V)
T_h = 25 °C; I_DM is single pulse; V_GS = 10 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 12915
Product data
Rev. 01 — 13 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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