PHT4NQ10T Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
10
IS
(A)
9
8
VGS = 0 V
03aa94
7
6
150oC
5
4
3
2
Tj = 25oC
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
VSD (V)
T_j = 25 °C and 150 °C; V_GS = 0 V
Fig 14. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
15
VGS
(V)
14
13
12
11
ID = 3.5 A
Tj = 25oC _{VDS = 20 V}
10
9
8
7
6
5
4
3
2
1
0
0123456
03aa96
VDS = 80 V
7 8 9 10 11 12
QG (nC)
I_D = 3.5 A; V_DS = 80 V
Fig 15. Gate-source voltage as a function of gate
charge; typical values.
9397 750 07337
Product specification
Rev. 01 — 31 July 2000
© Philips Electronics N.V. 2000. All rights reserved.
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