PHT4NQ10T Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
10
ID
(A)
9
8
7
Tj = 25oC
03aa90
VGS = 10V
6V
6
5.5 V
5
4
3
5V
2
4.8 V
4.6 V
1
4.44.2VV
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS (V)
10
ID
(A)
9
8
VDS > ID X RDSon
7
6
5
Tj = 25oC
4
3
2
1
0
012345
03aa92
150oC
678
VGS (V)
T_j = 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 150 °C; V_DS > I_D × R_DSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
1
RD(_{ΩS)on0.9}
0.8
0.7
4.4 V 4.8V
4.6V
5V
0.6
0.5
0.4
0.3
0.2
0.1
0
Tj = 25oC
01234
5.5 V
56
03aa91
6V
VGS = 10V
7 8 9 10
ID (A)
T_j = 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values.
3
a _2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20
03aa29
60 100 140 180
Tj (oC)
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 9. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07337
Product specification
Rev. 01 — 31 July 2000
© Philips Electronics N.V. 2000. All rights reserved.
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