PHT4NQ10T Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
03aa32
5
4.5
VGS(th)
(V) ⁴
3.5
max.
3
typ.
2.5
2
min
1.5
1
0.5
0
-60 -20
20
60 100 140 180
Tj (oC)
I_D = 1 mA; V_DS = V_GS
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
10-1
ID
(A) _10-2
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10-3
10-4
min
typ
max
10-5
10-6
0
1
2
3
4
5
VGS (V)
T_j = 25 °C; V_DS = 5 V
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
5
gfs
(S) ^4.5
4
VDS > ID X RDSon
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Tj = 25oC
3.5
150oC
3
2.5
2
1.5
1
0.5
0
0 1 2 3 4 5 6 7 8 9 10
ID (A)
T_j = 25 °C and 150 °C; V_DS > I_D × R_DSon
Fig 12. Forward transconductance as a function of
drain current; typical values.
103
Ciss, Coss,
Crss (pF)
102
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Ciss
Coss
10
10-1
1
Crss
10
102
VDS (V)
V_GS = 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07337
Product specification
Rev. 01 — 31 July 2000
© Philips Electronics N.V. 2000. All rights reserved.
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