PHT4NQ10T Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
R_th(j-sp)
thermal resistance from junction to solder
point
R_th(j-a)
thermal resistance from junction to ambient
Conditions
mounted on a metal clad substrate;
Figure 5
mounted on a printed circuit board;
minimum footprint
7.1 Transient thermal impedance
Value Unit
18
K/W
150
K/W
102
Zth(j-sp)
(K/W)
10
δ = 0.5
0.2
0.1
1 _0.05
0.02
10-1
10-2
10-5
single pulse
10-4
10-3
10-2
03aa87
P
δ
=
tp
T
tp
t
T
10-1
1
10
tp (s)
Mounted on a metal clad substrate.
Fig 5. Transient thermal impedance from junction to solder point as a function of
pulse duration.
9397 750 07337
Product specification
Rev. 01 — 31 July 2000
© Philips Electronics N.V. 2000. All rights reserved.
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