PHT4NQ10T Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
V_DS
I_D
P_tot
T_j
R_DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
T_j = 25 to 150°C
T_sp = 25 °C; V_GS = 10 V
T_sp = 25 °C
V_GS = 10 V; I_D = 1.75 A
Typ
Max Unit
−
100
V
−
3.5
A
−
6.9
W
−
150
°C
200
250
mΩ
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max Unit
V_DS
V_DGR
V_GS
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
T_j = 25 to 150 °C
T_j = 25 to 150 °C; R_GS = 20 kΩ
T_sp = 25 °C; V_GS = 10 V;
Figure 2 and 3
−
100
V
−
100
V
−
±20
V
−
3.5
A
I_DM
peak drain current
T_sp = 100 °C; V_GS = 10 V; Figure 2
T_sp = 25 °C; pulsed; t_p ≤ 10 µs;
Figure 3
−
2.2
A
−
14
A
P_tot
total power dissipation
T_stg
storage temperature
T_j
operating junction temperature
T_sp = 25 °C; Figure 1
−
6.9
W
−65
+150 °C
−65
+150 °C
Source-drain diode
I_S
source (diode forward) current (DC) T_sp = 25 °C
I_SM
peak source (diode forward) current T_sp = 25 °C; pulsed; t_p ≤ 10 µs
−
3.5
A
−
14
A
Avalanche ruggedness
E_AS
non-repetitive avalanche energy
unclamped inductive load; I_D = 3.5 A;
−
t_p = 0.2 ms; V_DD ≤ 15 V; R_GS = 50 Ω;
V_GS = 10 V; starting T_j = 25 °C;
Figure 4
45
mJ
I_AS
non-repetitive avalanche current
unclamped inductive load; V_DD ≤ 15 V;
−
R_GS = 50 Ω; V_GS = 10 V; Figure 4
3.5
A
9397 750 07337
Product specification
Rev. 01 — 31 July 2000
© Philips Electronics N.V. 2000. All rights reserved.
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