PHT4NQ10T Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

PHT4NQ10T
N-channel enhancement mode field-effect transistor
Rev. 01 — 31 July 2000
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™¹ technology.
Product availability:
PHT4NQ10T in SOT223.
2. Features
s TrenchMOS™ technology
s Very fast switching
s Surface mount package.
3. Applications
s Primary side switch in DC to DC converters
s High speed line driver
s Fast general purpose switch.
c
c
4. Pinning information
Table 1: Pinning - SOT223, simplified outline and symbol
Pin
Description
Simplified outline
1
gate (g)
2
drain (d)
4
3
source (g)
4
drain (d)
03ab45
1 23
SOT223
Symbol
d
g
03ab30
s
N-channel MOSFET
1. TrenchMOS is a trademark of Royal Philips Electronics.