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PHT4NQ10T Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
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Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Static characteristics
V(BR)DSS drain-source breakdown
ID = 250 µA; VGS = 0 V
voltage
Tj = 25 °C
100
Tj = −55 °C
89
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS
Tj = 25 °C; Figure 10
2
Tj = 150 °C; Figure 10
1.2
Tj = −55 °C; Figure 10
−
IDSS
drain-source leakage current VDS = 100 V; VGS = 0 V
Tj = 25 °C
−
Tj = 150 °C
−
IGSS
gate-source leakage current VGS = ±20 V; VDS = 0 V
−
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 1.75 A
Tj = 25 °C; Figure 8 and 9
−
Tj = 150 °C; Figure 9
−
Dynamic characteristics
gfs
forward transconductance VDS = 5 V; ID = 3.5 A;
−
Figure 12
Qg(tot)
total gate charge
ID = 3.5 A; VDS = 80 V;
−
Qgs
gate-source charge
VGS = 10 V; Figure 15
−
Qgd
gate-drain (Miller) charge
−
Ciss
input capacitance
VGS = 0 V; VDS = 25 V;
−
Coss
output capacitance
f = 1 MHz; Figure 13
−
Crss
reverse transfer capacitance
−
td(on)
tr
turn-on delay time
turn-off rise time
VDD = 50 V; RD = 15 Ω;
−
VGS = 10 V; RG = 6 Ω
−
td(off)
turn-off delay time
−
tf
turn-off fall time
−
Source-drain diode
VSD
source-drain (diode forward) IS = 3.5 A; VGS = 0 V;
−
voltage
Figure 14
trr
reverse recovery time
IS = 3.5 A;
−
Qr
recovered charge
dIS/dt = −100 A/µs;
−
VGS = 0 V; VDS = 30 V
Typ
Max
Unit
130
−
V
−
−
V
3
4
V
−
−
V
−
6
V
1
25
µA
4
250
µA
10
100
nA
200
250
mΩ
−
575
mΩ
4.2
−
S
7.4
−
nC
1.5
−
nC
3.3
−
nC
300
−
pF
44
−
pF
21
−
pF
8
−
ns
13
−
ns
20
−
ns
11
−
ns
0.87
1.5
V
50
−
ns
100
−
nC
9397 750 07337
Product specification
Rev. 01 — 31 July 2000
© Philips Electronics N.V. 2000. All rights reserved.
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