PHT4NQ10T Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
120
Pder
(%)
100
03aa17
80
60
40
20
0
0 25 50 75 100 125 150 175
Tsp (oC)
P_der
=
-------^P----^t--^o--^t-------
P
×
100
%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
120
Ider
(%)₁₀₀
03aa25
80
60
40
20
0
0 25 50 75 100 125 150 175
Tsp (oC)
V_GS ≥ 10 V
I_der = -_I------^I---^D-------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
102
ID
(A)
RDSon = VDS/ ID
10
1
D.C.
10-1
03aa88
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
03aa97
10
IAS
(A)
25oC
1
Tj prior to avalanche = 125oC
10-2
1
10
102 _{VDS (V)} 103
10-1
10-2
10-1
1 _{tp (ms)} 10
T_sp = 25 °C; I_DM is single pulse.
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage.
Unclamped inductive load; V_DD ≤ 15 V; R_GS = 50 Ω;
V_GS = 10 V; starting T_j = 25 °C and 125°C.
Fig 4. Non-repetitive avalanche ruggedness current
as a function of pulse duration.
9397 750 07337
Product specification
Rev. 01 — 31 July 2000
© Philips Electronics N.V. 2000. All rights reserved.
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