PHT2NQ10T Datasheet, PDF (8/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
PHT2NQ10T
N-channel TrenchMOS transistor
6
I_S ^{VGS = 0 V}
(A)
4
03ag31
2
150ºC
T_j = 25ºC
0
0
0.4
0.8 _{VSD (V)} 1.2
15
V_GS
(V)
12
I_D = 2.5 A
T_j = 25ºC
9
V_DD = 20 V
6
03ag33
V_DD = 80 V
3
0
0
2
4
6
8
Q_G (nC)
T_j = 25 °C and 150 °C; V_GS = 0 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I_D = 2.5 A; V_DD = 80 V, 20V
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
9397 750 08918
Product data
Rev. 01 — 16 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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