PHT2NQ10T Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
PHT2NQ10T
N-channel TrenchMOS transistor
10
I_{D Tj = 25ºC}
(A)
8
6
03ag28
V_GS = 10V
7V
6.5 V
6V
4
5.5 V
2
5V
4.5 V
0
0
1
2
3
4 _{VDS (V)5}
6
I_D ^{VDS > ID X RDSon}
(A)
4
03ag30
2
150ºC
T_j = 25ºC
0
0
2
4
6
8
V_GS (V)
T_j = 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 150 °C; V_DS > I_D × R_DSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.6
R_DSon
(Ω)
0.5
Tj = 25ºC
V_GS = 6V ^{6.5 V 7 V}
03ag29
10 V
0.4
0.3
0.2
0.1
0
2
4
6
8
10
I_D (A)
03aa29
3
a
2.5
2
1.5
1
0.5
0
-60
0
60
120 _{Tj (}o_C) 180
T_j = 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values.
a = -------^R----^D----^S--^o---ⁿ-------
R
D S o n ( 25 ^°C )
Fig 9. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 08918
Product data
Rev. 01 — 16 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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