PHT2NQ10T Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
PHT2NQ10T
N-channel TrenchMOS transistor
8. Characteristics
Table 5: Characteristics
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V_(BR)DSS drain-source breakdown voltage
V_GS(th) gate-source threshold voltage
I_DSS
drain-source leakage current
I_GSS
R_DSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
I_D = 250 µA; V_GS = 0 V
T_j = 25 °C
T_j = −55 °C
I_D = 1 mA; V_DS = V_GS; Figure 10
T_j = 25 °C
T_j = 150 °C
T_j = −55 °C
V_DS = 100 V; V_GS = 0 V
T_j = 25 °C
T_j = 150 °C
V_GS = ±10 V; V_DS = 0 V
V_GS = 10 V; I_D = 1.75 A; Figure 8 and 9
T_j = 25 °C
T_j = 150 °C
g_fs
forward transconductance
Q_g(tot) total gate charge
Q_gs
gate-source charge
Q_gd
gate-drain (Miller) charge
C_iss
input capacitance
C_oss
output capacitance
C_rss
reverse transfer capacitance
t_d(on)
turn-on delay time
t_r
rise time
t_d(off)
turn-off delay time
t_f
fall time
Source-drain diode
V_DS = 5 V; I_D = 2.5 A
I_D = 2.5 A; V_DD = 80 V; V_GS = 10 V; Figure 14
V_GS = 0 V; V_DS = 25 V; f = 1 MHz; Figure 12
V_DD = 50 V; R_D = 27 Ω; V_GS = 10 V; R_G = 6 Ω
V_SD
source-drain (diode forward) voltage I_S = 2.5 A; V_GS = 0 V; Figure 13
t_rr
reverse recovery time
I_S = 2.5 A; dI_S/dt = −100 A/µs; V_GS = 0 V
Q_r
recovered charge
Min Typ Max Unit
100 120 − V
89 − − V
234V
1.2 − − V
−−6V
− 1 25 µA
− 4 250 µA
− 10 100 nA
− 315 430 mΩ
− 725 990 mΩ
−3−S
− 5.1 − nC
− 1 − nC
− 2.1 − nC
− 160 − pF
− 29 − pF
− 18 − pF
− 4.5 − ns
− 7.7 − ns
− 7.8 − ns
− 2.5 − ns
− 0.9 1.5 V
− 45 − ns
− 90 − nC
9397 750 08918
Product data
Rev. 01 — 16 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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