PHT2NQ10T Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
PHT2NQ10T
N-channel TrenchMOS transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
R_th(j-sp)
R_th(j-a)
thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 5
thermal resistance from junction to ambient
mounted on a printed-circuit board;
minimum footprint
7.1 Transient thermal impedance
Value Unit
20 K/W
150 K/W
102
Z_th(j-sp)
(K/W)
03ag26
10 δ = 0.5
0.2
0.1
1 ^0.05
0.02
10-1
10-5
single pulse
10-4
10-3
10-2
10-1
P
δ
=
tp
T
tp
t
T
1
10
t_p (s)
T_sp = 25 °C
Fig 5. Transient thermal impedance from junction to solder point as a function of pulse duration.
9397 750 08918
Product data
Rev. 01 — 16 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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