PHT2NQ10T Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

PHT2NQ10T
N-channel TrenchMOS transistor
M3D087
Rev. 01 — 16 October 2001
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™¹ technology.
Product availability:
PHT2NQ10T in SOT223
2. Features
s TrenchMOS™ technology
s Fast switching
s Surface mount package.
3. Applications
s Primary side switch in DC to DC converters
s High speed driver
s Fast, general purpose switch.
4. Pinning information
Table 1: Pinning - SOT223, simplified outline and symbol
Pin Description
Simplified outline
Symbol
1
gate (g)
4
2
drain (d)
3
source (s)
4
drain (d)
1
Top view
2
3
MSB002 - 1
SOT223
d
g
MBB076
s
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.