PHT2NQ10T Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
PHT2NQ10T
N-channel TrenchMOS transistor
5
V_GS(th)
(V)
4
3
max
typ
03aa32
10-1
I_D
(A)
10-2
10-3
03aa35
min
typ
max
2
min
10-4
1
10-5
0
-60
0
60
120 _{Tj (oC)} 180
10-6
0
1
2
3
4
5
V_GS (V)
I_D = 1 mA; V_DS = V_GS
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
T_j = 25 °C; V_DS = 10 V
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
103
C
(pF)
102
03ag32
C_iss
C_oss
10
10-1
1
C_rss
10
102
V_DS (V)
V_GS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 08918
Product data
Rev. 01 — 16 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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