PHT2NQ10T Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
PHT2NQ10T
N-channel TrenchMOS transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
V_DS
I_D
P_tot
T_j
R_DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
25°C ≤ to ≤ 150 °C
T_sp = 25 °C; V_GS = 10 V
T_sp = 25 °C
V_GS = 10 V; I_D = 1.75 A
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
drain-source voltage (DC)
drain-gate voltage (DC)
25°C ≤ to ≤ 150 °C
25°C ≤ to ≤ 150 °C; R_GS = 20 kΩ
V_GS
gate-source voltage (DC)
I_D
drain current (DC)
I_DM
peak drain current
P_tot
total power dissipation
T_sp = 25 °C; V_GS = 10 V; Figure 2 and 3
T_sp = 100 °C; V_GS = 10 V;
T_sp = 25 °C; pulsed; t_p ≤ 10 µs; Figure 3
T_sp = 25 °C; Figure 1
T_stg
storage temperature
T_j
operating junction temperature
Source-drain diode
I_S
source (diode forward) current (DC) T_sp = 25 °C
I_SM
peak source (diode forward) current T_sp = 25 °C; t_p ≤ 10 µs
Avalanche ruggedness
E_AS
non-repetitive avalanche energy
unclamped inductive load; I_D =2.5 A;
t_p = 0.2 ms; V_DD ≤ 15 V; R_GS = 50 Ω;
V_GS = 10 V; starting T_j = 25 °C; Figure 4
I_AS
non-repetitive avalanche current unclamped inductive load; V_DD ≤ 15 V;
R_GS = 50 Ω; V_GS = 10 V; Figure 4
Typ
Max Unit
−
100
V
−
2.5
A
−
6.25 W
−
150
°C
315
430
mΩ
Min
Max Unit
−
100
V
−
100
V
−
±20
V
−
2.5
A
−
1.6
A
−
10
A
−
6.25 W
−65
+150 °C
−65
+150 °C
−
2.5
A
−
10
A
−
32
mJ
−
2.5
A
9397 750 08918
Product data
Rev. 01 — 16 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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