PHP112N06T Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHP112N06T; PHB112N06T
N-channel enhancement mode field-effect transistor
100
IS ₉₀
(A)
80
70
60
50
40
30
20
10
0
0
003aaa082
Tj = 150 ^oC
Tj = 25 ^oC
0.2 0.4 0.6 0.8 1.0 1.2
VSD (V)
T_j = 25 °C and 150 °C; V_GS = 0 V
Fig 14. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
10
VGS
(V)
8
ID
Tj
=
=
50
25
A
oC
VDD = 14 V
6
003aaa081
VDD = 44 V
4
2
0
0
20
40
60
80
100
QG (nC)
I_D = 50 A; V_DD = 14 V and 44 V
Fig 15. Gate-source voltage as a function of gate
charge; typical values.
9397 750 08108
Product specification
Rev. 01 — 07 March 2001
© Philips Electronics N.V. 2001. All rights reserved.
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