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| PHP112N06T Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
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PHP112N06T; PHB112N06T
N-channel enhancement mode ï¬eld-effect transistor
Rev. 01 â 07 March 2001
Product speciï¬cation
1. Description
N-channel enhancement mode ï¬eld-effect power transistor in a plastic package using
TrenchMOSâ¢1 technology.
Product availability:
PHP112N06T in SOT78 (TO-220AB)
PHB112N06T in SOT404 (D2-PAK).
2. Features
s Fast switching
s Very low on-state resistance.
3. Applications
s General purpose switching
s Switched mode power supplies.
c
4. Pinningc information
Table 1: Pinning - SOT78 and SOT404, simpliï¬ed outline and symbol
Pin
Description
Simpliï¬ed outline
Symbol
1
gate (g)
mb
mb
2
drain (d)
[1]
3
source (s)
mb
mounting base;
connected to
drain (d)
2
MBK106
123
1
3
MBK116
SOT78 (TO-220AB)
SOT404 (D2-PAK)
d
g
MBB076
s
[1] It is not possible to make connection to pin 2 of the SOT404 package.
1. TrenchMOS is a trademark of Royal Philips Electronics.
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