PHP112N06T Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHP112N06T; PHB112N06T
N-channel enhancement mode field-effect transistor
ID ^{160 18 V}
(A) 140
120
10 V
8.0 V
100
80
60
40
20
0
0
2
4
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7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
VGS = 4.5 V
6
8
10
VDS (V)
100
ID 90
(A) ₈₀
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70
60
50
40
30
Tj = 25 ^oC
20
Tj = 175 ^oC
10
0
0
1
23
4
5
6
7
VGS (V)
T_j = 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D × R_DSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
25
RDSon23
(mΩ) 21
19
17
15
13
11
9
7
5
5
VGS = 5.5 V
25
45
T_j = 25 °C
6.0 V
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6.5 V
7.0 V
7.5 V
8.0 V
9.0 V
10.0 V
65
85 105 125
ID (A)
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values.
2.0
1.8
a
1.6
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1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-80 -40 0 40 80 120 160 200
Tj (oC)
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 9. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 08108
Product specification
Rev. 01 — 07 March 2001
© Philips Electronics N.V. 2001. All rights reserved.
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