PHP112N06T Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHP112N06T; PHB112N06T
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V_(BR)DSS drain-source breakdown
voltage
I_D = 250 µA; V_GS = 0 V
V_GS(th)
gate-source threshold voltage I_D = 1 mA; V_DS = V_GS;
Figure 10
I_DSS
I_GSS
R_DSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
T_j = 25 °C
T_j = 175 °C
V_GS = 0 V; V_DS = 55 V
T_j = 25 °C
T_j = 175 °C
V_DS = 0 V; V_GS = ±20 V
V_GS = 10 V; I_D = 25 A;
Figure 8 and 9
Dynamic characteristics
T_j = 25 ^oC
T_j = 175 °C
Q_g(tot)
total gate charge
Q_gs
gate-source charge
Q_gd
gate-drain (Miller) charge
C_iss
input capacitance
C_oss
output capacitance
C_rss
reverse transfer capacitance
t_d(on)
turn-on delay time
t_r
rise time
t_d(off)
turn-off delay time
t_f
fall time
Source-drain diode
I_D = 50 A; V_DD = 44 V;
V_GS = 10 V; Figure 15
V_GS = 0 V; V_DS = 25 V;
f = 1 MHz; Figure 13
V_DD = 30 V; R_D = 1.2 Ω;
V_GS = 5 V; R_G = 10 Ω
V_SD
source-drain (diode forward) I_S = 25 A; V_GS = 0 V;
voltage
Figure 14
t_rr
reverse recovery time
I_S = 75 A;
Q_r
recovered charge
dI_S/dt = −100 A/µs;
V_GS = -10 V; V_R = 30 V
Min
Typ
Max
Unit
55
−
−
V
2.0
3.0
4.0
V
1.0
−
−
V
−
0.05
10
µA
−
−
500
µA
−
2
100
nA
−
7.2
8.0
mΩ
−
−
16
mΩ
−
87
−
nC
−
24
−
nC
−
29
nC
−
3264
4352
pF
−
720
863
pF
−
389
533
pF
−
24
36
ns
−
94
141
ns
−
100
140
ns
−
80
112
ns
−
0.85
1.2
V
−
65
−
ns
−
0.17
−
µC
9397 750 08108
Product specification
Rev. 01 — 07 March 2001
© Philips Electronics N.V. 2001. All rights reserved.
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