PHP112N06T Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHP112N06T; PHB112N06T
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
R_th(j-mb)
thermal resistance from junction to mounting Figure 5
base
R_th(j-a)
thermal resistance from junction to ambient
SOT78 package; vertical in still air
SOT404 package; mounted on
printed circuit board; minimum
footprint.
7.1 Transient thermal impedance
Value Unit
0.75
K/W
60
K/W
50
K/W
10
Zth _(j-mb)
(K/W)
1
10-1
10-2
δ = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10-3
10-7
10-6
10-5
10-4
10-3
10-2
003aaa070
P
δ
=
tp
T
tp
T
10-1
1
tp (s)
t
10
Fig 5. Transient thermal impedance from junction to mounting base as a function of
pulse duration.
9397 750 08108
Product specification
Rev. 01 — 07 March 2001
© Philips Electronics N.V. 2001. All rights reserved.
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