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PHP112N06T Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
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Philips Semiconductors
PHP112N06T; PHB112N06T
N-channel enhancement mode ï¬eld-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
Conditions
Tj = 25 to 175 °C
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
Tj = 25 °C; VGS = 10 V; ID = 25 A
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
Tj = 25 to 175 °C
Tj = 25 to 175 °C; RGS = 20 kâ¦
Tmb = 25 °C; VGS = 10 V
Figure 2 and 3
Tmb = 100 °C; VGS = 10 V
Figure 2 and 3
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ⤠10 µs;
Figure 3
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Source-drain diode
Tmb = 25 °C; Figure 1
IS
source (diode forward) current Tmb = 25 °C
(DC)
ISM
peak source (diode forward)
Tmb = 25 °C; pulsed; tp ⤠10 µs
current
Avalanche ruggedness
EAS
non-repetitive avalanche energy unclamped inductive load;
IAS = 60 A; tp = 0.1 ms; VDD ⤠25 V;
RGS = 50 â¦; VGS = 5 V; starting
Tj = 25 °C; Figure 4
Typ
Max
Unit
â
55
V
â
75
A
â
200
W
â
175
°C
7.2
8
mâ¦
Min
Max
Unit
â
55
V
â
55
V
â
±20
V
â
75
A
â
52.5
A
â
400
A
â
200
W
â55
175
°C
â55
175
°C
â
75
A
â
400
A
â
360
mJ
9397 750 08108
Product speciï¬cation
Rev. 01 â 07 March 2001
© Philips Electronics N.V. 2001. All rights reserved.
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