PHP112N06T Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHP112N06T; PHB112N06T
N-channel enhancement mode field-effect transistor
5
VGS(th)
(V)
4
3
2
1
max.
typ
min
003aaa077
10-1
ID
(A)
10-2
10-3
10-4
10-5
003aaa078
2%
typ
98%
0
-80 -40 0 40 80 120 160 200
Tj (oC)
10-6
0
1
2
3
4
5
VGS (V)
I_D = 1 mA; V_DS = V_GS
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
T_j = 25 °C
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
60
gfs
(S) ₅₀
003aaa075
40
30
20
10
0
0
20
40
60
80
100
ID (A)
T_j = 25 °C; V_DS = 25 V
Fig 12. Forward transconductance as a function of
drain current; typical values.
7
Ciss,
Coss,
Crss
6
(nF)
5
Ciss
Coss
003aaa079
4
Crss
3
2
1
0
10-2
10-1
1
10
102
VDS (V)
V_GS = 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 08108
Product specification
Rev. 01 — 07 March 2001
© Philips Electronics N.V. 2001. All rights reserved.
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