PHN70308 Datasheet, PDF (8/10 Pages) NXP Semiconductors – N-channel enhancement mode TrenchMOS transistor array

Philips Semiconductors
N-channel enhancement mode
TrenchMOS transistor array
Source-Drain Diode Current, IF (A)
10
VGS = 0 V
9
8
7
6
5
150 C
4
3
2
1
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Source-Drain Voltage, VSDS (V)
Tj = 25 C
0.8 0.9
1
Fig.23. Typical reverse diode current (isolation FET)
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
Product specification
PHN70308
May 1999
8
Rev 1.000