PHN70308 Datasheet, PDF (2/10 Pages) NXP Semiconductors – N-channel enhancement mode TrenchMOS transistor array

Philips Semiconductors
N-channel enhancement mode
TrenchMOS transistor array
Product specification
PHN70308
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DS
V_DGR
V_GS
I_D
I_DM
P_tot
P_tot
T_stg, T_j
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Peak drain current per device
(continuous operation)
Peak current per device (pulse
peak value)
Power dissipation per device²
Total power dissipation in normal
operation²
Storage & operating temperature
T_j = 25 ˚C to 150˚C
R_GS = 20 kΩ
T_sp = 50 ˚C¹
spindle FETs; δ = 33.3%
Isolation FET (dc)
spindle FETs
isolation FET
T_sp = 50 ˚C
spindle FETs; δ = 33.3%
isolation FET (dc)
T_sp = 50 ˚C
spindle FETs; δ = 33.3%
isolation FET (dc)
MIN.
-
-
-
-
-
-
-
-
-
-
- 55
MAX.
25
25
± 20
5
5
20
20
1.13
1.275
8
150
UNIT
V
V
V
A
A
A
A
W
W
W
˚C
THERMAL RESISTANCES
SYMBOL
R_{th j-sp}
R_{th j-a}
PARAMETER
Thermal resistance junction to
solder point
Thermal resistance junction to
ambient
CONDITIONS
isolation FET
spindle FET
device soldered to FR4 board,
minimum footprint.
isolation FET
spindle FET
TYP.
20
43
85
100
MAX.
-
-
-
-
UNIT
K/W
K/W
K/W
K/W
1 T_sp is the temperature at the soldering point of the drain leads.
2 In normal operation, the isolation FET conducts continuously whilst each of the spindle FETs conducts for 33.3%
of the time. The dissipation in the isolation transistor is given by:-
P = I x R _isolation
2
DS(ON) (isolationFET)
The dissipation in each of the spindle transistors is given by:-
P_spindle = 0.333x I ²x R_{DS(ON)(spindleFET)}
The total dissipation under these conditions is given by:-
P_tot = P_isolation + 6x P_spindle
With the motor being driven at 5 A and assuming T_j = 150˚C, the total dissipation is:-
P_tot = 25x0.03x1.7 + 0.333x25x0.08x1.7x6 = 8W
Switching losses are assumed to be negligible.
May 1999
2
Rev 1.000