PHN70308 Datasheet, PDF (6/10 Pages) NXP Semiconductors – N-channel enhancement mode TrenchMOS transistor array

Philips Semiconductors
N-channel enhancement mode
TrenchMOS transistor array
Product specification
PHN70308
Drain Current, ID (A)
10
10 V
VGS = 4.5 V
9
Tj = 25 C
8
7
3.6 V
6
5
3.4 V
4
3.2 V
3
2
3V
1
2.8 V
2.6 V
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
Drain-Source Voltage, VDS (V)
Fig.11. Typical output characteristics (isolation FET)
T_j = 25 ˚C; I_D = f(V_DS); parameter V_GS
Drain-Source On Resistance, RDS(on) (Ohms)
0.5
2.8 V
3.2 V 3.4V
3.6 V
3V
0.4
Tj = 25 C
0.3
0.2
VGS =4.5 V
0.1
10V
0
0
1
2 _{Drain3Current, I4D (A)} 5
6
7
8
Fig.12. Typical on-state resistance (spindle FET)
T_j = 25 ˚C; R_DS(ON) = f(I_D); parameter V_GS
Drain-Source On Resistance, RDS(on) (Ohms)
0.2
3V
3.2 V
3.4V
3.6 V
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
1
2
3Drain _{C4urrent, I5D (A)} 6
7
Tj = 25 C
VGS =4.5 V
10V
8
9
10
Fig.13. Typical on-state resistance (isolation FET)
T_j = 25 ˚C; R_DS(ON) = f(I_D); parameter V_GS
Drain current, ID (A)
5
VDS > ID X RDS(ON)
4.5
4
3.5
3
2.5
2
1.5
150 C
1
0.5
Tj = 25 C
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Gate-source voltage, VGS (V)
Fig.14. Typical transfer characteristics (spindle FET)
I_D = f(V_GS)
Drain current, ID (A)
5
VDS > ID X RDS(ON)
4.5
4
3.5
3
2.5
2
150 C
1.5
1
0.5
Tj = 25 C
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Gate-source voltage, VGS (V)
Fig.15. Typical transfer characteristics
(isolation FET); I_D = f(V_GS)
Transconductance, gfs (S)
6
VDS > ID X RDS(ON)
5
Tj = 25 C
4
150 C
3
2
1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Drain current, ID (A)
Fig.16. Typical transconductance (spindle FET)
T_j = 25 ˚C; g_fs = f(I_D)
May 1999
6
Rev 1.000