PHN70308 Datasheet, PDF (3/10 Pages) NXP Semiconductors – N-channel enhancement mode TrenchMOS transistor array

Philips Semiconductors
N-channel enhancement mode
TrenchMOS transistor array
Product specification
PHN70308
ELECTRICAL CHARACTERISTICS
T_j= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V_(BR)DSS Drain-source breakdown
voltage
V_GS = 0 V; I_D = 10 µA
25 -
-
V
V_GS(TO)
R_DS(ON)
Gate threshold voltage
Drain-source on-state
resistance
V_DS = V_GS; I_D = 1 mA
V_GS = 10 V; I_D = 4 A
1.0 1.5 -
V
spindle FET - 60 80 mΩ
isolation FET - 27 30 mΩ
R_DS(ON)
Drain-source on-state
resistance
V_GS = 4.5 V; I_D = 2 A
spindle FET - 95 150 mΩ
isolation FET - 38 60 mΩ
R_DS(ON)
Drain-source on-state
resistance
V_GS = 10 V; I_D = 4 A; T_j = 150˚C
spindle FET - 102 136 mΩ
isolation FET - 46 51 mΩ
I_GSS
Gate source leakage current V_GS = ±20 V; V_DS = 0 V
I_DSS
Zero gate voltage drain
V_DS = 20 V; V_GS = 0 V;
current
- 10 100 nA
- 10 100 nA
T_j = 150˚C - 0.1 0.5 mA
Q_g(tot)
Q_gs
Q_gd
Total gate charge
I_D = 1 A; V_DD = 20 V; V_GS = 10 V
spindle FET - 5.4 - nC
isolation FET - 17.6 - nC
Gate-source charge
spindle FET - 0.4 - nC
isolation FET - 1.4 - nC
Gate-drain (Miller) charge
spindle FET - 1.6 - nC
isolation FET - 5.7 - nC
t _on
Turn-on time
t _off
Turn-off time
V_DD = 20 V; I_D = 1 A; V_GS = 10 V; R_G = 6 Ω;
resistive load
spindle FET - 5.5 10 ns
isolation FET - 11 20 ns
spindle FET - 16 25 ns
isolation FET - 45 60 ns
C_iss
Input capacitance
C_oss
Output capacitance
C_rss
Feedback capacitance
V_GS = 0 V; V_DS = 20 V; f = 1 MHz
spindle FET - 180 - pF
isolation FET - 546 - pF
spindle FET - 70 - pF
isolation FET - 311 - pF
spindle FET - 36 - pF
isolation FET - 133 - pF
May 1999
3
Rev 1.000