PBHV9115X115 Datasheet, PDF (8/13 Pages) NXP Semiconductors – 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
8. Test information
PBHV9115X
150 V, 1 A PNP high-voltage low V_CEsat (BISS) transistor
V_BB
V_CC
(probe)
oscilloscope
450 Ω
V_I
R_B
R2
R1
Fig 12. Test circuit for switching times
R_C
V_{o (probe)}
oscilloscope
450 Ω
DUT
mgd624
9. Package outline
4.6
4.4
1.6
1.8
1.4
1.4
2.6
2.4
1
2
0.53
0.40
1.5
3
Dimensions in mm
1.2
3
0.8
0.48
0.35
Fig 13. Package outline SOT89 (SC-62/TO-243)
4.25
3.75
0.44
0.23
06-08-29
10. Packing information
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.^[1]
Type number Package Description
PBHV9115X
SOT89
8 mm pitch, 12 mm tape and reel; T1
8 mm pitch, 12 mm tape and reel; T3
Packing quantity
1000 4000
[2] _-115
-135
[3] _-120
-
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T3: 90° taping
PBHV9115X_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
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