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PBHV9115X115 Datasheet, PDF (4/13 Pages) NXP Semiconductors – 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
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NXP Semiconductors
PBHV9115X
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
10
006aab847
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
006aab848
1
0
0.02
0.01
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBHV9115X_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
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