PBHV9115X115 Datasheet, PDF (6/13 Pages) NXP Semiconductors – 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV9115X
150 V, 1 A PNP high-voltage low V_CEsat (BISS) transistor
400
h_FE
300
200
100
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(1)
(2)
(3)
0
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
V_CE = −10 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 4. DC current gain as a function of collector
current; typical values
−1.2
V_BE
(V)
−0.8
−0.4
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(1)
(2)
(3)
−2.0
I_C
(A)
−1.5
−1.0
−0.5
0.0
0
−1
T_amb = 25 °C
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I_B (mA) = −300
−200
−150
−100
−50
−20
−10 _−5
−2
−1
−2
−3
−4
−5
V_CE (V)
Fig 5. Collector current as a function of
collector-emitter voltage; typical values
−1.3
V_BEsat
(V)
−0.9
−0.5
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(1)
(2)
(3)
0
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
−0.1
−10^−1
−1
−10
−10²
−10³
I_C (mA)
V_CE = −10 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 6. Base-emitter voltage as a function of collector
current; typical values
I_C/I_B = 10
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 7. Base-emitter saturation voltage as a function
of collector current; typical values
PBHV9115X_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
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