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PBHV9115X115 Datasheet, PDF (7/13 Pages) NXP Semiconductors – 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
NXP Semiconductors
PBHV9115X
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
−1
006aab851
−1
006aab852
VCEsat
(V)
VCEsat
(V)
−10−1
(1)
(2)
(3)
−10−2
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
(Ω)
102
006aab853
−10−1
(1)
(2)
(3)
−10−2
−10−1
−1
−10
−102
−103
IC (mA)
Tamb = 25 °C
(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 10
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
(Ω)
102
006aab854
10
(1)
(2)
1
10−1
−10−1
−1
(3)
−10
−102
−103
−104
IC (mA)
IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
10
(1)
(2)
1
(3)
10−1
−10−1
−1
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
PBHV9115X_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
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