PBHV9115X115 Datasheet, PDF (1/13 Pages) NXP Semiconductors – 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

PBHV9115X
150 V, 1 A PNP high-voltage low V_CEsat (BISS) transistor
Rev. 01 — 10 March 2010
Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low V_CEsat Breakthrough In Small Signal (BISS) transistor in a
SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
„ High voltage
„ Low collector-emitter saturation voltage V_CEsat
„ High collector current capability I_C and I_CM
„ High collector current gain (h_FE) at high I_C
1.3 Applications
„ LED driver for LED chain module
„ LCD backlighting
„ Automotive motor management
„ Hook switch for wired telecom
„ Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Symbol
V_CEO
I_C
h_FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
Conditions
open base
V_CE = −10 V;
I_C = −50 mA
Min Typ Max Unit
-
-
−150 V
-
-
−1
A
100 220 -
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
emitter
collector
base
Simplified outline Graphic symbol
321
2
3
1
sym079