PBHV9115X115 Datasheet, PDF (5/13 Pages) NXP Semiconductors – 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV9115X
150 V, 1 A PNP high-voltage low V_CEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
I_CBO
collector-base
cut-off current
I_CES
collector-emitter
cut-off current
I_EBO
emitter-base
cut-off current
V_CB = −120 V;
I_E = 0 A
V_CB = −120 V;
I_E = 0 A; T_j = 150 °C
V_CE = −120 V;
V_BE = 0 V
V_EB = −4 V; I_C = 0 A
h_FE
DC current gain
V_CEsat
collector-emitter
saturation voltage
V_BEsat
t_d
t_r
t_on
t_s
base-emitter
saturation voltage
delay time
rise time
turn-on time
storage time
V_CE = −10 V
I_C = −50 mA
I_C = −100 mA
I_C = −1 A
I_C = −100 mA;
I_B = −10 mA
I_C = −100 mA;
I_B = −20 mA
I_C = −500 mA;
I_B = −50 mA
I_C = −1 A;
I_B = −100 mA
V_CC = −6 V;
I_C = −0.5 A;
I_Bon = −0.1 A;
I_Boff = 0.1 A
t_f
fall time
t_off
turn-off time
f_T
transition frequency V_CE = −10 V;
I_C = −10 mA;
f = 100 MHz
C_c
collector capacitance V_CB = −20 V;
I_E = i_e = 0 A;
f = 1 MHz
C_e
emitter capacitance
V_EB = −0.5 V;
I_C = i_c = 0 A;
f = 1 MHz
[1] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
Min
-
-
-
-
100
[1] ₁₀₀
[1] ₁₀
[1] _-
[1] _-
[1] _-
[1] _-
-
-
-
-
-
-
-
-
-
Typ Max Unit
-
−100 nA
-
−10 μA
-
−100 nA
-
−100 nA
220 -
220 -
30
-
−60 −120 mV
−50 −100 mV
−200 −300 mV
−1
−1.2 V
8
-
282 -
290 -
430 -
300 -
730 -
115 -
ns
ns
ns
ns
ns
ns
MHz
10
-
pF
150 -
pF
PBHV9115X_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
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