PBHV9115X115 Datasheet, PDF (3/13 Pages) NXP Semiconductors – 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV9115X
150 V, 1 A PNP high-voltage low V_CEsat (BISS) transistor
2.0
P_tot
(W)
1.6
(1)
006aab846
1.2
0.8
(2)
0.4
0.0
−75
−25
25
75
(1) FR4 PCB, mounting pad for collector 6 cm²
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
125
175
T_amb (°C)
6. Thermal characteristics
Table 6.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
R_th(j-sp)
thermal resistance from
junction to solder point
Min Typ Max Unit
[1] _-
-
240 K/W
[2] _-
-
80 K/W
-
-
20 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm².
PBHV9115X_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
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