PBHV9115X115 Datasheet, PDF (2/13 Pages) NXP Semiconductors – 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV9115X
150 V, 1 A PNP high-voltage low V_CEsat (BISS) transistor
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
PBHV9115X SC-62
plastic surface-mounted package; collector pad for good
heat transfer; 3 leads
Version
SOT89
4. Marking
Table 4. Marking codes
Type number
PBHV9115X
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code^[1]
*4G
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
collector-base voltage
open emitter
-
V_CEO
collector-emitter voltage
open base
-
V_CESM
collector-emitter peak
V_BE = 0 V
-
voltage
V_EBO
I_C
I_CM
I_BM
P_tot
emitter-base voltage
open collector
-
collector current
-
peak collector current
single pulse;
-
t_p ≤ 1 ms
peak base current
single pulse;
-
t_p ≤ 1 ms
total power dissipation
T_amb ≤ 25 °C
[1]
[2]
T_j
junction temperature
-
T_amb
ambient temperature
−55
T_stg
storage temperature
−65
Max Unit
−200 V
−150 V
−200 V
−6
V
−1
A
−2
A
−400 mA
520
mW
1.5
W
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm².
PBHV9115X_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
2 of 13