BUJ303CD_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – NPN power transistor

NXP Semiconductors
BUJ303CD
NPN power transistor
1.4
V_BEsat
(V)
1.2
1.0
003aag652
10²
h_FE
V_CE = 3 V
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0.8
10
0.6
0.4
0.2
0
10^-1
1
10
I_C (A)
1
10^-2
10^-1
1
10
I_C (A)
Fig. 11. Base-emitter saturation voltage as a function of Fig. 12. DC current gain as a function of collector
collector current; typical values
current; typical values
V_CC
R_L
V_IM
R_B
0
DUT
t_p
T
001aab989
Fig. 13. Test circuit for resistive load switching
I_C
90 %
I_Con
90 %
I_B
t_on
t_s
t_off
I_Bon
10 %
t
t_f
10 %
t_r ≤ 30 ns
- I_Boff
t
001aab990
Fig. 14. Switching times waveforms for resistive load
BUJ303CD
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 November 2012
© NXP B.V. 2012. All rights reserved
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