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BUJ303CD_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – NPN power transistor
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NXP Semiconductors
Symbol
Parameter
Conditions
IEBO
emitter-base cut-off
VEB = 9 V; IC = 0 A; Tmb = 25 °C
current
VCEOsus
collector-emitter
sustaining voltage
IB = 0 A; IC = 100 mA; LC = 25 mH;
Tmb = 25 °C; Fig. 7; Fig. 8
VCEsat
collector-emitter
saturation voltage
IC = 1 A; IB = 0.2 A; Tmb = 25 °C; Fig. 9;
Fig. 10
IC = 3 A; IB = 1 A; Tmb = 25 °C; Fig. 9;
Fig. 10
VBEsat
base-emitter saturation IC = 3 A; IB = 1 A; Tmb = 25 °C; Fig. 11
voltage
hFE
DC current gain
IC = 10 mA; VCE = 3 V; Tmb = 25 °C;
Fig. 12
IC = 250 mA; VCE = 3 V; Tmb = 25 °C;
Fig. 12
IC = 800 mA; VCE = 3 V; Tmb = 25 °C;
Fig. 12
Dynamic Characteristics (switching times - resistive load)
ton
turn-on time
IC = 2.5 A; IBon = 0.5 A; IBoff = -1 A;
ts
turn-off delay time
RL = 100 Ω; VCC = 250 V; Tj = 25 °C;
Fig. 13; Fig. 14
tf
fall time
Dynamic Characteristics (switching times - inductive load)
ts
turn-off delay time
IC = 2.5 A; IBon = 0.5 A; VCC = 350 V;
VBB = -5 V; LB = 1 µH; Tj = 25 °C;
Fig. 15; Fig. 16
ts
turn-off delay time
IC = 2.5 A; IBon = 0.5 A; VCC = 350 V;
VBB = -5 V; LB = 1 µH; Tj = 100 °C;
Fig. 15; Fig. 16
tf
fall time
IC = 2.5 A; IBon = 0.5 A; VCC = 350 V;
VBB = -5 V; LB = 1 µH; Tj = 25 °C;
Fig. 15; Fig. 16
IC 2.5 A; IBon = 0.5 A; VCC = 350 V;
VBB = -5 V; LB = 1 µH; Tj = 100 °C;
Fig. 15; Fig. 16
[1] Measured with half-sine wave voltage (curve tracer).
BUJ303CD
NPN power transistor
Min Typ Max Unit
-
-
0.1 mA
400 -
-
V
-
-
0.5 V
-
0.25 1.5 V
-
1
1.5 V
28
34
47
35
43
57
31
37
48
-
1
-
ms
-
2.5 -
ms
-
0.3 -
ms
-
2
-
ms
-
3
-
ms
-
200 -
ns
-
300 -
ns
BUJ303CD
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 November 2012
© NXP B.V. 2012. All rights reserved
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