BUJ303CD_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – NPN power transistor

NXP Semiconductors
BUJ303CD
NPN power transistor
7.0
7.0
2.15
2.5
Fig. 5. Minimum footprint SOT428
1.5
4.57
001aab021
10
001aab998
Z_th(j-mb)
(K/W)
1 ^{δ = 0.5}
0.2
0.1
10^{- 1}
0.05
0.02
0.01
P_tot
δ=
t_p
T
t_p
t
T
10^{- 2}
10^{- 5}
10^{- 4}
10^{- 3}
10^{- 2}
10^{- 1}
1
10
t_p (s)
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
I_CES
collector-emitter cut-off V_BE = 0 V; V_CE = 1050 V; T_mb = 25 °C [1]
current
V_BE = 0 V; V_CE = 1050 V; T_j = 125 °C [1]
I_CBO
collector-base cut-off V_CB = 1050 V; I_E = 0 A; T_mb = 25 °C
[1]
current
I_CEO
collector-emitter cut-off V_CE = 400 V; I_B = 0 A; T_mb = 25 °C
[1]
current
BUJ303CD
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 November 2012
Min Typ Max Unit
-
-
1
mA
-
-
2
mA
-
-
1
mA
-
-
0.1 mA
© NXP B.V. 2012. All rights reserved
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