BUJ303CD_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – NPN power transistor

BUJ303CD
NPN power transistor
8 November 2012
Product data sheet
1. Product profile
1.1 General description
High voltage high speed planar passivated NPN power switching transistor in a SOT428
(DPAK) surface mountable plastic package.
1.2 Features and benefits
• Fast switching
• Low thermal resistance
• Surface mountable package
• Tight DC gain spreads
• Very high voltage capability
• Very low switching and conduction losses
1.3 Applications
• DC-to-DC converters
• High frequency electronic lighting ballasts
• Inverters
• Motor control systems
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
I_C
collector current
Fig. 1; Fig. 2; Fig. 4
P_tot
total power dissipation T_mb ≤ 25 °C; Fig. 3
V_CESM
collector-emitter peak V_BE = 0 V
voltage
Static characteristics
h_FE
DC current gain
I_C = 10 mA; V_CE = 3 V; T_mb = 25 °C;
Fig. 12
I_C = 250 mA; V_CE = 3 V; T_mb = 25 °C;
Fig. 12
I_C = 800 mA; V_CE = 3 V; T_mb = 25 °C;
Fig. 12
Min Typ Max Unit
-
-
5
A
-
-
80
W
-
-
1050 V
28
34
47
35
43
57
31
37
48
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