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| BUJ303CD_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – NPN power transistor | |||
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NXP Semiconductors
BUJ303CD
NPN power transistor
102
IC
(A)
ICMm1a0x
ICmax
1
003aag029
duty cycle = 0.01
II(3)
tp = 10 µs
(1)
100 µs
10-1
(2)
1 ms
I(3)
10 ms
DC
Fig. 4.
10-2
1
III(3)
10
102
103
VCEclamp (V)
(1) Ptot maximum and Ptot peak maximum lines.
(2) Second breakdown limits.
(3) I = Region of permissible DC operation.
II = Extension for repetitive pulse operation.
III = Extension during turn-on in single transistor converters provided that RBE ⤠100 Ω and tp ⤠0.6 μs.
Forward bias safe operating area for Tmb ⤠25 °C
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 6
printed circuit board (FR4) mounted;
minimum footprint; Fig. 5
Min Typ Max Unit
-
-
1.56 K/W
-
75
-
K/W
BUJ303CD
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 November 2012
© NXP B.V. 2012. All rights reserved
4 / 13
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