BUJ303CD_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – NPN power transistor

NXP Semiconductors
V_CC
L_C
V_CL(CE)
probe point
I_Bon
V_BB
L_B
DUT
001aab999
Fig. 1. Test circuit for reverse bias safe operating area
12
I_C
(A)
8
4
BUJ303CD
NPN power transistor
003aag649
120
P_der
(%)
80
0
0
400
800
1200
V_CEclamp (V)
Fig. 2. Reverse bias safe operating area
001aab993
40
0
0
40
80
120
160
T_mb (°C)
Fig. 3. Normalized total power dissipation as a function of mounting base temperature
BUJ303CD
Product data sheet
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8 November 2012
© NXP B.V. 2012. All rights reserved
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