BUJ303CD_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – NPN power transistor

NXP Semiconductors
BUJ303CD
NPN power transistor
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
B
base
mb
2
C
collector[1]
3
E
emitter
mb
C
mounting base; connected to
collector
2
1
3
DPAK (SOT428)
Graphic symbol
C
B
E
sym123
[1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package.
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUJ303CD
DPAK
Description
Version
plastic single-ended surface-mounted package (DPAK); 3 leads SOT428
(one lead cropped)
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_CESM
collector-emitter peak voltage V_BE = 0 V
V_CEO
collector-emitter voltage
I_B = 0 A
I_C
collector current
Fig. 1; Fig. 2; Fig. 4
I_CM
peak collector current
I_B
base current
I_BM
peak base current
P_tot
total power dissipation
T_mb ≤ 25 °C; Fig. 3
T_stg
storage temperature
T_j
junction temperature
Min Max Unit
-
1050 V
-
400 V
-
5
A
-
10
A
-
2
A
-
4
A
-
80
W
-65 150 °C
-
150 °C
BUJ303CD
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 November 2012
© NXP B.V. 2012. All rights reserved
2 / 13