 English |
|
|
|
|
|
|
|
| BFU730LX_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor | |||
| |||
| ◁ |
NXP Semiconductors
BFU730LX
NPN wideband silicon germanium RF transistor
1)PLQ
G%
DDD
I *+]
VCE = 3 V; Tamb = 25 ï°C.
(1) IC = 5 mA
(2) IC = 10 mA
(3) IC = 15 mA
(4) IC = 20 mA
(5) IC = 25 mA
(6) IC = 30 mA
Fig 6. Minimum noise figure as a function of
frequency; typical values
3/ G%
G%P
DDD
,F P$
VCE = 3 V; Tamb = 25 ï°C.
(1) f = 1.8 GHz
(2) f = 6 GHz
Fig 7. Output power at 1 dB gain compression as a
function of collector current; typical values
BFU730LX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 8 May 2013
© NXP B.V. 2013. All rights reserved.
8 of 13
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese