BFU730LX_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU730LX
NPN wideband silicon germanium RF transistor
4. Marking
Table 4. Marking
Type number
BFU730LX
Marking
ZD
5. Design support
Table 5. Available design support
Download from the BFU730LX product page on http://www.nxp.com.
Support item
Available
Device models for Agilent EEsof EDA ADS
yes
Device models for Agilent EEsof EDA Genesys
yes
Device models for AWR Microwave Office
planned
Device models for ANSYS Ansoft designer
planned
SPICE model
planned
S-parameters
yes
Noise parameters
yes
Customer evaluation kit
yes
Gerber files evaluation board
yes
Reflow soldering footprint
yes
AN11223: Low Noise Fast Turn ON/OFF 2.4-2.5GHz yes
WiFi LNA with BFU730LX
AN11224: Low Noise Fast Turn ON/OFF 5-5.9GHz
yes
WiFi LNA with BFU730LX
[1] See http://www.nxp.com/models.html.
Remarks
[1] _{Based on Mextram device model}
Based on Mextram device model
Based on Mextram device model
Based on Mextram device model
Based on Gummel-Poon device model
Application note
Application note
6. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CB
collector-base voltage
open emitter
-
V_CE
collector-emitter voltage open base
-
shorted base
-
V_EB
emitter-base voltage
open collector
-
P_tot
total power dissipation
T_sp  110 C
[1] _-
T_stg
storage temperature
65
T_j
junction temperature
-
[1] T_sp is the temperature at the solder point of the emitter lead.
Max
10.0
3.0
10.0
1.3
160
+150
150
Unit
V
V
V
V
mW
C
C
BFU730LX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 8 May 2013
© NXP B.V. 2013. All rights reserved.
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