BFU730LX_15 Datasheet, PDF(1/13 Page) NXP Semiconductors – NPN wideband silicon germanium RF transistor

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BFU730LX_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

BFU730LX

NPN wideband silicon germanium RF transistor

Rev. 1 â 8 May 2013

Product data sheet

1. Product profile

CAUTION

1.1 General description

NPN silicon germanium microwave transistor for high speed, low noise applications in a

SOT883C leadless ultra small plastic SMD package.

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

1.2 Features and benefits

ï® Leadless ultra small plastic SMD package 1.0 mm ï´ 0.6 mm ï´ 0.34 mm

ï® Low noise high gain microwave transistor

ï® Noise figure (NF) = 0.75 dB at 6 GHz

ï® High maximum power gain (Gp(max)) of 15.8 dB at 6 GHz

ï® Excellent linearity in WiFi LNA from 5 GHz to 5.9 GHz:

ïµ input third-order intercept point (IP3i) = 15 dBm

ïµ input power at 1 dB gain compression (Pi(1dB)) = 0 dBm

See application note AN11224: Low Noise Fast Turn ON/OFF 5-5.9GHz WiFi LNA with

BFU730LX.

ï® 110 GHz fT silicon germanium technology

1.3 Applications

ï® Wi-Fi / WLAN

See application notes:

ïµ AN11223: Low Noise Fast Turn ON/OFF 2.4-2.5GHz WiFi LNA with BFU730LX

ïµ AN11224: Low Noise Fast Turn ON/OFF 5-5.9GHz WiFi LNA with BFU730LX

ï® WiMAX

ï® LNA for GPS, GLONASS, Galileo and Compass (BeiDou)

ï® DBS (2nd LNA stage, mixer stage, DRO), SDARS

ï® RKE, AMR / Zigbee

ï® LNA for microwave communications systems

ï® Low current battery equipped applications

ï® Microwave driver / buffer applications

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